2N5323 vs 2N5323-LF vs 2N5323-R4

 
PartNumber2N53232N5323-LF2N5323-R4
DescriptionBipolar Transistors - BJT . .BIPOLAR TRANSISTOR, PNP, -50V TO-39, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-50V, Transition Frequency ft:-, Power Dissipation Pd:10W, DC Collector Current:2A, DC Current GaBIPOLAR POWER TRANSISTOR
ManufacturerCentral Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-39-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO75 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage1.2 V--
Maximum DC Collector Current2 A--
Gain Bandwidth Product fT50 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 200 C--
Series2N5323--
DC Current Gain hFE Max250 at 500 mA, 4 V--
PackagingBulk--
BrandCentral Semiconductor--
DC Collector/Base Gain hfe Min40 at 500 mA, 4 V--
Pd Power Dissipation10 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity500--
SubcategoryTransistors--
Part # Aliases2N5323 PBFREE--
Unit Weight0.035486 oz--
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