PartNumber | 2N5323 | 2N5323-LF | 2N5323-R4 |
Description | Bipolar Transistors - BJT . . | BIPOLAR TRANSISTOR, PNP, -50V TO-39, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-50V, Transition Frequency ft:-, Power Dissipation Pd:10W, DC Collector Current:2A, DC Current Ga | BIPOLAR POWER TRANSISTOR |
Manufacturer | Central Semiconductor | - | - |
Product Category | Bipolar Transistors - BJT | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-39-3 | - | - |
Transistor Polarity | PNP | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 50 V | - | - |
Collector Base Voltage VCBO | 75 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Collector Emitter Saturation Voltage | 1.2 V | - | - |
Maximum DC Collector Current | 2 A | - | - |
Gain Bandwidth Product fT | 50 MHz | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 200 C | - | - |
Series | 2N5323 | - | - |
DC Current Gain hFE Max | 250 at 500 mA, 4 V | - | - |
Packaging | Bulk | - | - |
Brand | Central Semiconductor | - | - |
DC Collector/Base Gain hfe Min | 40 at 500 mA, 4 V | - | - |
Pd Power Dissipation | 10 W | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 500 | - | - |
Subcategory | Transistors | - | - |
Part # Aliases | 2N5323 PBFREE | - | - |
Unit Weight | 0.035486 oz | - | - |