2N5401 vs 2N5401 ZE vs 2N5401 2L

 
PartNumber2N54012N5401 ZE2N5401 2L
DescriptionBipolar Transistors - BJT PNP Gen Pr Amp
ManufacturerCentral Semiconductor-CJ
Product CategoryBipolar Transistors - BJT-IC Chips
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max150 V--
Collector Base Voltage VCBO160 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.5 V--
Maximum DC Collector Current0.6 A--
Gain Bandwidth Product fT300 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Series2N5401--
Height5.33 mm--
Length5.21 mm--
PackagingBulk--
Width4.19 mm--
BrandCentral Semiconductor--
Continuous Collector Current- 600 mA--
DC Collector/Base Gain hfe Min50--
Pd Power Dissipation625 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Part # Aliases2N5401 PBFREE--
Unit Weight0.016000 oz--
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