2N5551TF vs 2N5551TFR vs 2N5551TFR-CUT TAPE

 
PartNumber2N5551TF2N5551TFR2N5551TFR-CUT TAPE
DescriptionBipolar Transistors - BJT NPN Transistor General PurposeBipolar Transistors - BJT NPN Transistor General Purpose
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3 Kinked LeadTO-92-3 Kinked Lead-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max160 V160 V-
Collector Base Voltage VCBO180 V180 V-
Emitter Base Voltage VEBO6 V6 V-
Collector Emitter Saturation Voltage0.2 V0.2 V-
Maximum DC Collector Current0.6 A0.6 A-
Gain Bandwidth Product fT300 MHz300 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Series2N55512N5551-
DC Current Gain hFE Max250250-
Height4.7 mm4.7 mm-
Length4.7 mm4.7 mm-
PackagingReelReel-
Width3.93 mm3.93 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current0.6 A0.6 A-
DC Collector/Base Gain hfe Min8080-
Pd Power Dissipation625 mW625 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity20002000-
SubcategoryTransistorsTransistors-
Unit Weight0.008466 oz0.008466 oz-
Part # Aliases-2N5551TFR_NL-
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