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| PartNumber | 2N5582 | 2N5581 | 2N5581/TR |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | N |
| Packaging | Bulk | Foil Bag | Reel |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | 100 |
| Subcategory | Transistors | Transistors | Transistors |
| Technology | - | - | Si |
| Mounting Style | - | - | Through Hole |
| Package / Case | - | - | TO-206AB-3 |
| Transistor Polarity | - | - | NPN |
| Configuration | - | - | Single |
| Collector Emitter Voltage VCEO Max | - | - | 50 V |
| Collector Base Voltage VCBO | - | - | 75 V |
| Emitter Base Voltage VEBO | - | - | 6 V |
| Collector Emitter Saturation Voltage | - | - | 0.3 V |
| Maximum DC Collector Current | - | - | 800 mA |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 200 C |
| DC Current Gain hFE Max | - | - | 120 at 150 mA, 10 V |
| DC Collector/Base Gain hfe Min | - | - | 20 at 500 mA, 10 V |
| Pd Power Dissipation | - | - | 2 W |