2N5680 vs 2N5680A vs 2N5680B

 
PartNumber2N56802N5680A2N5680B
DescriptionBipolar Transistors - BJT PNP Ampl/Switch
ManufacturerCentral Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-39-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max120 V--
Collector Base Voltage VCBO120 V--
Emitter Base Voltage VEBO4 V--
Collector Emitter Saturation Voltage2 V--
Maximum DC Collector Current1 A--
Gain Bandwidth Product fT30 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Series2N5680--
Height6.6 mm--
Length9.4 mm--
PackagingBulk--
Width9.4 mm--
BrandCentral Semiconductor--
Continuous Collector Current0.45 A--
DC Collector/Base Gain hfe Min40--
Pd Power Dissipation1 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity500--
SubcategoryTransistors--
Part # Aliases2N5680 PBFREE--
Unit Weight0.035486 oz--
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