2N5885G vs 2N5885 vs 2N5885-QR-B

 
PartNumber2N5885G2N58852N5885-QR-B
DescriptionBipolar Transistors - BJT 25A 60V 200W NPNBipolar Transistors - BJT NPN Power SWBipolar Transistors - BJT BIPOLAR POWER TRANSISTOR
ManufacturerON SemiconductorCentral Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-204-2TO-3-2-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max60 V60 V-
Collector Base Voltage VCBO60 V60 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage1 V4 V-
Maximum DC Collector Current25 A25 A-
Gain Bandwidth Product fT4 MHz4 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 200 C-
Series2N58852N5885-
Height8.51 mm--
Length39.37 mm--
PackagingTrayTube-
Width26.67 mm--
BrandON SemiconductorCentral Semiconductor-
Continuous Collector Current25 A--
DC Collector/Base Gain hfe Min2020-
Pd Power Dissipation200 W200 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity10020-
SubcategoryTransistorsTransistors-
Unit Weight0.423993 oz0.225789 oz-
Part # Aliases-2N5885 PBFREE-
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