2N5961 vs 2N596 vs 2N5961(D27Z)

 
PartNumber2N59612N5962N5961(D27Z)
DescriptionBipolar Transistors - BJT NPN Low Lvl SW
ManufacturerCentral SemiconductorFSC-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO8 V--
Collector Emitter Saturation Voltage0.2 V0.2 V-
Maximum DC Collector Current0.05 A0.05 A-
Gain Bandwidth Product fT100 MHz100 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Series2N59612N5961-
Height5.33 mm--
Length5.21 mm--
PackagingBulkBulk-
Width4.19 mm--
BrandCentral Semiconductor--
Continuous Collector Current0.1 A0.1 A-
Pd Power Dissipation625 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Part # Aliases2N5961 PBFREE--
Unit Weight0.016000 oz0.016000 oz-
Part Aliases-BK-
Package Case-TO-92-
Pd Power Dissipation-625 mW-
Collector Emitter Voltage VCEO Max-60 V-
Collector Base Voltage VCBO-60 V-
Emitter Base Voltage VEBO-8 V-
DC Collector Base Gain hfe Min-100-
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