2N6491 vs 2N6491,2N6491G, vs 2N6491,2N6504,2N6292,2N6

 
PartNumber2N64912N6491,2N6491G,2N6491,2N6504,2N6292,2N6
DescriptionBipolar Transistors - BJT PNP Med Power
ManufacturerCentral Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Transistor PolarityPNP--
Collector Emitter Voltage VCEO Max80 V--
Collector Base Voltage VCBO90 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage3.5 V--
Maximum DC Collector Current15 A--
Gain Bandwidth Product fT5 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Series2N6491--
PackagingBulk--
BrandCentral Semiconductor--
Continuous Collector Current0.45 A--
DC Collector/Base Gain hfe Min5 at 15 A, 4 V--
Pd Power Dissipation75 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity400--
SubcategoryTransistors--
Part # Aliases2N6491 PBFREE--
Unit Weight0.211644 oz--
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