PartNumber | 2N6491 | 2N6491,2N6491G, | 2N6491,2N6504,2N6292,2N6 |
Description | Bipolar Transistors - BJT PNP Med Power | ||
Manufacturer | Central Semiconductor | - | - |
Product Category | Bipolar Transistors - BJT | - | - |
RoHS | Y | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-220-3 | - | - |
Transistor Polarity | PNP | - | - |
Collector Emitter Voltage VCEO Max | 80 V | - | - |
Collector Base Voltage VCBO | 90 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Collector Emitter Saturation Voltage | 3.5 V | - | - |
Maximum DC Collector Current | 15 A | - | - |
Gain Bandwidth Product fT | 5 MHz | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | 2N6491 | - | - |
Packaging | Bulk | - | - |
Brand | Central Semiconductor | - | - |
Continuous Collector Current | 0.45 A | - | - |
DC Collector/Base Gain hfe Min | 5 at 15 A, 4 V | - | - |
Pd Power Dissipation | 75 W | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 400 | - | - |
Subcategory | Transistors | - | - |
Part # Aliases | 2N6491 PBFREE | - | - |
Unit Weight | 0.211644 oz | - | - |