2N7002DW H6327 vs 2N7002DWH6327XTSA1 vs 2N7002DWH6327XT

PartNumber	2N7002DW H6327	2N7002DWH6327XTSA1	2N7002DWH6327XT
Description	MOSFET N-Ch 60V 300mA SOT-363-6	MOSFET N-Ch 60V 300mA SOT-363-6	MOSFET N-Ch 60V 300mA SOT-363-6
Manufacturer	Infineon	Infineon	Infineon
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	Y
Technology	Si	Si	Si
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	SOT-363-6	SOT-363-6	SOT-363-6
Number of Channels	2 Channel	2 Channel	2 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	60 V	60 V	60 V
Id Continuous Drain Current	300 mA	300 mA	300 mA
Rds On Drain Source Resistance	1.6 Ohms	1.6 Ohms	1.6 Ohms
Vgs th Gate Source Threshold Voltage	1.5 V	1.5 V	1.5 V
Vgs Gate Source Voltage	20 V	20 V	20 V
Qg Gate Charge	600 pC, 600 pC	600 pC, 600 pC	600 pC, 600 pC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	500 mW (1/2 W)	500 mW (1/2 W)	500 mW (1/2 W)
Configuration	Dual	Dual	Dual
Channel Mode	Enhancement	Enhancement	Enhancement
Qualification	AEC-Q101	AEC-Q101	AEC-Q101
Packaging	Reel	Reel	Reel
Height	0.9 mm	0.9 mm	0.9 mm
Length	2 mm	2 mm	2 mm
Series	2N7002	2N7002	2N7002
Transistor Type	2 N-Channel	2 N-Channel	2 N-Channel
Width	1.25 mm	1.25 mm	1.25 mm
Brand	Infineon Technologies	Infineon Technologies	Infineon Technologies
Forward Transconductance Min	200 mS, 200 mS	200 mS, 200 mS	200 mS, 200 mS
Fall Time	3.1 ns, 3.1 ns	3.1 ns, 3.1 ns	3.1 ns, 3.1 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	3.3 ns, 3.3 ns	3.3 ns, 3.3 ns	3.3 ns, 3.3 ns
Factory Pack Quantity	3000	3000	3000
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	5.5 ns, 5.5 ns	5.5 ns, 5.5 ns	5.5 ns, 5.5 ns
Typical Turn On Delay Time	3 ns, 3 ns	3 ns, 3 ns	3 ns, 3 ns
Part # Aliases	2N7002DWH6327XTSA1 2N72DWH6327XT SP000917596	2N7002DW 2N72DWH6327XT H6327 SP000917596	2N7002DWH6327XTSA1 SP000917596
Unit Weight	0.000265 oz	0.000265 oz	0.000265 oz