2N7002E-T1-E3 vs 2N7002(E)-T1 vs 2N7002E-T1 , MAX6314US26

 
PartNumber2N7002E-T1-E32N7002(E)-T12N7002E-T1 , MAX6314US26
DescriptionMOSFET 60V 0.24A
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current240 mA--
Rds On Drain Source Resistance3 Ohms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge0.6 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation350 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Series2N7002E--
Transistor Type1 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min600 mS--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18 ns--
Typical Turn On Delay Time13 ns--
Part # Aliases2N7002E-E3--
Unit Weight0.000282 oz--
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