2N7002VA vs 2N7002VA-7-F vs 2N7002VA-7

 
PartNumber2N7002VA2N7002VA-7-F2N7002VA-7
DescriptionMOSFET N-Chan Enhancement Mode Field EffectMOSFET 2N-CH 60V 0.28A SOT-563MOSFET 60V 150mW
ManufacturerON Semiconductor-Diodes Incorporated
Product CategoryMOSFET-FETs - Arrays
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-563F-6--
Number of Channels2 Channel-2 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current280 mA--
Rds On Drain Source Resistance7.5 Ohms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation250 mW--
ConfigurationDual-Dual
Channel ModeEnhancement-Enhancement
PackagingReel-Tape & Reel (TR)
Height0.78 mm--
Length1.6 mm--
ProductMOSFET Small Signal--
Series2N7002VA-2N7002
Transistor Type2 N-Channel-2 N-Channel
Width0.88 mm--
BrandON Semiconductor / Fairchild--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time12.5 ns-20 ns
Typical Turn On Delay Time5.85 ns-20 ns
Unit Weight0.000071 oz-0.000106 oz
Package Case--SOT-563, SOT-666
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--SOT-563
FET Type--2 N-Channel (Dual)
Power Max--150mW
Drain to Source Voltage Vdss--60V
Input Capacitance Ciss Vds--50pF @ 25V
FET Feature--Standard
Current Continuous Drain Id 25°C--280mA
Rds On Max Id Vgs--7.5 Ohm @ 50mA, 5V
Vgs th Max Id--2.5V @ 250μA
Gate Charge Qg Vgs---
Pd Power Dissipation--150 mW
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--115 mA
Vds Drain Source Breakdown Voltage--60 V
Rds On Drain Source Resistance--13.5 Ohms
Forward Transconductance Min--0.08 S
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