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| PartNumber | 2N7002W-7-F | 2N7002W-7-F , MAX6716UTS | 2N7002W-7-F , MAX6716UTSYD3 |
| Description | MOSFET 60V 200mW | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-323-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 115 mA | - | - |
| Rds On Drain Source Resistance | 13.5 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1 mm | - | - |
| Length | 2.2 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | 2N7002W | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | Enhancement Mode Field Effect Transistor | - | - |
| Width | 1.35 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 80 mS | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 11 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Unit Weight | 0.000988 oz | - | - |