2SAR522EBTL vs 2SAR522MT2L vs 2SAR522M

 
PartNumber2SAR522EBTL2SAR522MT2L2SAR522M
DescriptionBipolar Transistors - BJT PNP General Purpose Amplification TransistorBipolar Transistors - BJT PNP General Purpose Amplification Transistor
ManufacturerROHM SemiconductorROHM SemiconductorRohm Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single, Pre-Biased
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-416FL-3SOT-723-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 20 V- 20 V-
Collector Base Voltage VCBO- 20 V- 20 V-
Emitter Base Voltage VEBO- 5 V- 5 V-
Collector Emitter Saturation Voltage- 120 mV- 120 mV-
Maximum DC Collector Current- 200 mA- 200 mA-
Gain Bandwidth Product fT350 MHz350 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Series2SAR522EB2SAR522M2SAR522M
DC Current Gain hFE Max560560-
PackagingReelReelDigi-ReelR Alternate Packaging
BrandROHM SemiconductorROHM Semiconductor-
Continuous Collector Current- 200 mA- 200 mA-
DC Collector/Base Gain hfe Min120120-
Pd Power Dissipation150 mW150 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30008000-
SubcategoryTransistorsTransistors-
Part # Aliases2SAR522EB2SAR522M-
Unit Weight0.000212 oz--
Package Case--SOT-723
Mounting Type--Surface Mount
Supplier Device Package--VMT3
Power Max--150mW
Transistor Type--PNP
Current Collector Ic Max--200mA
Voltage Collector Emitter Breakdown Max--20V
DC Current Gain hFE Min Ic Vce--120 @ 1mA, 2V
Vce Saturation Max Ib Ic--300mV @ 10mA, 100mA
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition--350MHz
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