2SAR523MT2L vs 2SAR523EBTL vs 2SAR523M

 
PartNumber2SAR523MT2L2SAR523EBTL2SAR523M
DescriptionBipolar Transistors - BJT PNP General Purpose Amplification TransistorBipolar Transistors - BJT PNP General Purpose Amplification Transistor
ManufacturerROHM SemiconductorROHM SemiconductorRohm Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single, Pre-Biased
RoHSYY-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseVMT-3EMT-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 50 V- 50 V-
Collector Base Voltage VCBO- 50 V- 50 V-
Emitter Base Voltage VEBO- 5 V- 5 V-
Collector Emitter Saturation Voltage- 150 mV- 150 mV-
Maximum DC Collector Current- 100 mA- 100 mA-
Gain Bandwidth Product fT300 MHz300 MHz-
Maximum Operating Temperature+ 150 C+ 150 C-
Series2SAR523M2SAR523EB2SAR523M
DC Current Gain hFE Max560560-
PackagingReelReelDigi-ReelR Alternate Packaging
BrandROHM SemiconductorROHM Semiconductor-
DC Collector/Base Gain hfe Min120120-
Pd Power Dissipation150 mW150 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity80003000-
SubcategoryTransistorsTransistors-
Part # Aliases2SAR523M2SAR523EB-
Package Case--SOT-723
Mounting Type--Surface Mount
Supplier Device Package--VMT3
Power Max--150mW
Transistor Type--PNP
Current Collector Ic Max--100mA
Voltage Collector Emitter Breakdown Max--50V
DC Current Gain hFE Min Ic Vce--120 @ 1mA, 6V
Vce Saturation Max Ib Ic--400mV @ 5mA, 50mA
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition--300MHz
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