2SD1664T100R vs 2SD1664T100R,UN521L-(TX) vs 2SD1664T100R,UN9115-(TX)

 
PartNumber2SD1664T100R2SD1664T100R,UN521L-(TX)2SD1664T100R,UN9115-(TX)
DescriptionBipolar Transistors - BJT NPN 32V 1A
ManufacturerROHM Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max32 V--
Collector Base Voltage VCBO40 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current1 A--
Gain Bandwidth Product fT150 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max390--
Height1.5 mm--
Length4.5 mm--
PackagingReel--
Width2.5 mm--
BrandROHM Semiconductor--
Continuous Collector Current1 A--
DC Collector/Base Gain hfe Min82--
Pd Power Dissipation500 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.004603 oz--
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