2SD1767T100Q vs 2SD1767T100R vs 2SD1767T100Q,UNR31AMG0L+

PartNumber	2SD1767T100Q	2SD1767T100R	2SD1767T100Q,UNR31AMG0L+
Description	Bipolar Transistors - BJT NPN 80V 0.7A	Bipolar Transistors - BJT NPN 80V 0.7A
Manufacturer	ROHM Semiconductor	ROHM Semiconductor	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	Y	-
Mounting Style	SMD/SMT	SMD/SMT	-
Transistor Polarity	NPN	NPN	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	80 V	80 V	-
Collector Base Voltage VCBO	80 V	80 V	-
Emitter Base Voltage VEBO	5 V	5 V	-
Collector Emitter Saturation Voltage	0.2 V	-	-
Maximum DC Collector Current	1 A	1 A	-
Gain Bandwidth Product fT	120 MHz	120 MHz	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	2SD1767	2SD1767	-
DC Current Gain hFE Max	390	180 at 100 mA, 3 V	-
Height	1.5 mm	1.5 mm	-
Length	4.5 mm	4.5 mm	-
Packaging	Reel	Reel	-
Width	2.5 mm	2.5 mm	-
Brand	ROHM Semiconductor	ROHM Semiconductor	-
Continuous Collector Current	0.7 A	0.7 A	-
DC Collector/Base Gain hfe Min	120	120	-
Pd Power Dissipation	1 W	2 W	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	1000	1000	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.004603 oz	0.004603 oz	-
Package / Case	-	SOT-89-3	-