2SD2150T100S vs 2SD2150T100S,UNR9113J-TX vs 2SD2150T100S/R

 
PartNumber2SD2150T100S2SD2150T100S,UNR9113J-TX2SD2150T100S/R
DescriptionBipolar Transistors - BJT NPN 20V 3A
ManufacturerROHM Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max20 V--
Collector Base Voltage VCBO40 V--
Emitter Base Voltage VEBO6 V--
Maximum DC Collector Current3 A--
Gain Bandwidth Product fT290 MHz--
Maximum Operating Temperature+ 150 C--
Series2SD2150--
DC Current Gain hFE Max560--
Height1.5 mm--
Length4.5 mm--
PackagingReel--
Width2.5 mm--
BrandROHM Semiconductor--
Continuous Collector Current3 A--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation500 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
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