2SD2351T106V vs 2SD2351T106W vs 2SD2351T106W , RHP030N03

PartNumber	2SD2351T106V	2SD2351T106W	2SD2351T106W , RHP030N03
Description	Bipolar Transistors - BJT NPN 50V 150MA	Bipolar Transistors - BJT NPN 50V 150MA
Manufacturer	ROHM Semiconductor	ROHM Semiconductor	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	Y	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	SOT-323-3	SC-70-3	-
Transistor Polarity	NPN	NPN	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	50 V	50 V	-
Collector Base Voltage VCBO	60 V	60 V	-
Emitter Base Voltage VEBO	12 V	12 V	-
Maximum DC Collector Current	0.15 A	0.15 A	-
Gain Bandwidth Product fT	250 MHz	250 MHz	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	2SD2351	2SD2351	-
DC Current Gain hFE Max	820 at 1 mA, 5 V	2700	-
Height	0.8 mm	0.8 mm	-
Length	2 mm	2 mm	-
Packaging	Reel	Reel	-
Width	1.25 mm	1.25 mm	-
Brand	ROHM Semiconductor	ROHM Semiconductor	-
Continuous Collector Current	0.15 A	0.15 A	-
DC Collector/Base Gain hfe Min	820	820	-
Pd Power Dissipation	200 mW	200 mW	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	3000	3000	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.000176 oz	0.000219 oz	-
Collector Emitter Saturation Voltage	-	0.3 V	-