6116LA120DB vs 6116LA150DB vs 6116LA120TDB

 
PartNumber6116LA120DB6116LA150DB6116LA120TDB
DescriptionSRAM 16K Asynch. 2Kx8 HS, L-Pwr, SRAMSRAM 16K Asynch. 2Kx8 HS, L-Pwr, SRAMSRAM 16K Asynch. 2Kx8 HS, L-Pwr, SRAM
ManufacturerCypress SemiconductorCypress SemiconductorIDT (Integrated Device Technology)
Product CategorySRAMSRAMSRAM
RoHSNNN
Memory Size16 Mbit36 Mbit16 kbit
Organization2 M x 8, 1 M x 161 M x 362 k x 8
Access Time70 ns-120 ns
Maximum Clock Frequency-250 MHz-
Interface TypeParallelParallelParallel
Supply Voltage Max3.6 V1.9 V5.5 V
Supply Voltage Min2.2 V1.7 V4.5 V
Supply Current Max25 mA490 mA85 mA
Minimum Operating Temperature- 40 C0 C- 55 C
Maximum Operating Temperature+ 85 C+ 70 C+ 125 C
Mounting StyleSMD/SMTSMD/SMTThrough Hole
Package / CaseVFBGA-48FBGA-165CDIP-24
PackagingTrayTrayTube
Memory TypeVolatileVolatileSDR
SeriesCY62167DV30LLCY7C1420KV186116LA120
TypeAsynchronousSynchronousAsynchronous
BrandCypress SemiconductorCypress SemiconductorIDT
Number of Ports1--
Moisture SensitiveYesYes-
Product TypeSRAMSRAMSRAM
Factory Pack Quantity21013615
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
TradenameMoBL--
Unit Weight0.007873 oz--
Shipping Restrictions--
Height--3.56 mm
Length--32.51 mm
Width--7.62 mm
Part # Aliases--6116 IDT6116LA120TDB
Top