A2C25S12M3 vs A2C25S12M3-F vs A2C25-A-C8

 
PartNumberA2C25S12M3A2C25S12M3-FA2C25-A-C8
DescriptionIGBT Modules PTD HIGH VOLTAGEIGBT Modules PTD HIGH VOLTAGECable Clamps and Clips Backed Clip Adhesive Polyvinyl Chloride Gray 6.4mm
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryIGBT ModulesIGBT Modules-
RoHSYY-
TechnologySiSi-
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationConverter Inverter BrakeConverter Inverter Brake-
Collector Emitter Voltage VCEO Max1200 V1200 V-
Collector Emitter Saturation Voltage1.95 V1.95 V-
Continuous Collector Current at 25 C25 A25 A-
Gate Emitter Leakage Current500 nA500 nA-
Pd Power Dissipation197 W197 W-
Package / CaseACEPACK2ACEPACK2-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesA2C25S12M3A2C25S12M3-F-
BrandSTMicroelectronicsSTMicroelectronics-
Mounting StyleThrough HolePress Fit-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity1818-
SubcategoryIGBTsIGBTs-
TradenameACEPACKACEPACK-
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