PartNumber | AC857BSQ-7 | AC857BQ-7 | AC857BQTA |
Description | Bipolar Transistors - BJT General Purpose Transistor | Bipolar Transistors - BJT General Purpose Transistor | |
Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
RoHS | Y | Y | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Transistor Polarity | PNP | PNP | - |
Configuration | Dual | Single | - |
Collector Emitter Voltage VCEO Max | - 45 V | - 45 V | - |
Collector Base Voltage VCBO | - 50 V | - 50 V | - |
Emitter Base Voltage VEBO | - 5 V | - 5 V | - |
Collector Emitter Saturation Voltage | - 400 mV | - 650 mV | - |
Maximum DC Collector Current | - 200 mA | - 200 mA | - |
Gain Bandwidth Product fT | 100 MHz | 200 MHz | - |
Minimum Operating Temperature | - 55 C | - 65 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
DC Current Gain hFE Max | 475 | 475 | - |
Brand | Diodes Incorporated | Diodes Incorporated | - |
Continuous Collector Current | - 100 mA | - 100 mA | - |
Pd Power Dissipation | 200 mW | 350 mW | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | Transistors | Transistors | - |
Technology | - | Si | - |