AFIC10275NR5 vs AFIC10275NR1 vs AFIC10275N

PartNumber	AFIC10275NR5	AFIC10275NR1	AFIC10275N
Description	RF MOSFET Transistors Airfast RF LDMOS Wideband Integrated Power Amplifier, 978-1090 MHz, 250 W Peak, 50 V	RF MOSFET Transistors 978-1090 MHz, 250 W Peak, 50 V
Manufacturer	NXP	NXP	-
Product Category	RF MOSFET Transistors	RF MOSFET Transistors	-
Transistor Polarity	N-Channel	N-Channel	-
Technology	Si	Si	-
Id Continuous Drain Current	1.6 A	1.6 A	-
Vds Drain Source Breakdown Voltage	- 500 mV, 100 V	- 500 mV, 100 V	-
Gain	32.1 dB	32.1 dB	-
Output Power	250 W	250 W	-
Minimum Operating Temperature	- 40 C	- 40 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	TO-270WB-14	TO-270WB-14	-
Packaging	Reel	Reel	-
Operating Frequency	978 MHz to 1090 MHz	978 MHz to 1090 MHz	-
Type	RF Power MOSFET	RF Power MOSFET	-
Brand	NXP / Freescale	NXP / Freescale	-
Number of Channels	1 Channel	1 Channel	-
Product Type	RF MOSFET Transistors	RF MOSFET Transistors	-
Factory Pack Quantity	50	500	-
Subcategory	MOSFETs	MOSFETs	-
Vgs Gate Source Voltage	- 6 V, 10 V	- 6 V, 10 V	-
Vgs th Gate Source Threshold Voltage	1.3 V	1.3 V	-
Part # Aliases	935312592578	935312592528	-
Unit Weight	0.058255 oz	0.058255 oz	-
RoHS	-	Y	-
Moisture Sensitive	-	Yes	-