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| PartNumber | ALD114904SAL | ALD114904APAL | ALD114904ASAL |
| Description | MOSFET Dual EPAD(R) N-Ch | MOSFET Dual EPAD(R) N-Ch | MOSFET Dual EPAD(R) N-Ch |
| Manufacturer | Advanced Linear Devices | Advanced Linear Devices | Advanced Linear Devices |
| Product Category | MOSFET | MOSFET | MOSFET |
| Shipping Restrictions | |||
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
| Package / Case | SOIC-8 | PDIP-8 | SOIC-8 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 10 V | 10 V | 10 V |
| Id Continuous Drain Current | 12 mA | 12 mA | 12 mA |
| Rds On Drain Source Resistance | 500 Ohms, 500 Ohms | 500 Ohms, 500 Ohms | 500 Ohms |
| Vgs th Gate Source Threshold Voltage | 440 mV | 420 mV | - |
| Vgs Gate Source Voltage | 10.6 V | 10.6 V | 10.6 V |
| Minimum Operating Temperature | 0 C | 0 C | 0 C |
| Maximum Operating Temperature | + 70 C | + 70 C | + 70 C |
| Pd Power Dissipation | 500 mW | 500 mW | 500 mW (1/2 W) |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Depletion | Depletion | Depletion |
| Packaging | Tube | Tube | Tube |
| Product | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal |
| Series | ALD114904S | ALD114904A | ALD114904A |
| Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
| Type | MOSFET | MOSFET | MOSFET |
| Brand | Advanced Linear Devices | Advanced Linear Devices | Advanced Linear Devices |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 10 ns | 10 ns | 10 ns |
| Typical Turn On Delay Time | 10 ns | 10 ns | 10 ns |
| Unit Weight | 0.002998 oz | 0.032805 oz | 0.002998 oz |
| Forward Transconductance Min | - | - | 0.0014 S |