ALD212900ASAL vs ALD212900PAL vs ALD212900APAL

PartNumber	ALD212900ASAL	ALD212900PAL	ALD212900APAL
Description	MOSFET Dual N-Ch EPAD FET Array VGS=0.0V	MOSFET Dual N-Ch EPAD FET Array VGS=0.0V	MOSFET Dual N-Ch EPAD FET Array VGS=0.0V
Manufacturer	Advanced Linear Devices	Advanced Linear Devices	Advanced Linear Devices
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	Y
Technology	Si	Si	Si
Mounting Style	SMD/SMT	Through Hole	Through Hole
Package / Case	SOIC-8	PDIP-8	PDIP-8
Number of Channels	2 Channel	2 Channel	2 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	10 V	10 V	10 V
Id Continuous Drain Current	79 mA	79 mA	79 mA
Rds On Drain Source Resistance	14 Ohms	14 Ohms	14 Ohms
Vgs th Gate Source Threshold Voltage	10 mV	20 mV	10 mV
Vgs Gate Source Voltage	10.6 V	10.6 V	10.6 V
Minimum Operating Temperature	0 C	0 C	0 C
Maximum Operating Temperature	+ 70 C	+ 70 C	+ 70 C
Pd Power Dissipation	500 mW	500 mW	500 mW
Configuration	Dual	Dual	Dual
Channel Mode	Depletion	Depletion	Depletion
Packaging	Tube	Tube	Tube
Series	ALD212900A	ALD212900P	ALD212900A
Transistor Type	2 N-Channel	2 N-Channel	2 N-Channel
Brand	Advanced Linear Devices	Advanced Linear Devices	Advanced Linear Devices
Product Type	MOSFET	MOSFET	MOSFET
Factory Pack Quantity	50	50	50
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	10 ns	10 ns	10 ns
Typical Turn On Delay Time	10 ns	10 ns	10 ns
Unit Weight	0.002998 oz	0.032805 oz	0.032805 oz