PartNumber | APT100GT60JR | APT100GT60JRDQ4 | APT100GT60B2RG |
Description | IGBT Modules FG, IGBT, 600V, 100A, SOT-227 | IGBT Modules FG, IGBT-COMBI, 600V,100A, SOT-227 | IGBT Transistors FG, IGBT, 600V, TO-247 T-MAX, RoHS |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | IGBT Modules | IGBT Modules | IGBT Transistors |
RoHS | Y | Y | Y |
Product | IGBT Silicon Carbide Modules | IGBT Silicon Carbide Modules | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
Collector Emitter Saturation Voltage | 2.1 V | 2.1 V | - |
Continuous Collector Current at 25 C | 148 A | 148 A | - |
Gate Emitter Leakage Current | 300 nA | 300 nA | - |
Pd Power Dissipation | 500 W | 500 W | - |
Package / Case | ISOTOP-4 | ISOTOP-4 | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Packaging | Tube | Tube | Tube |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Mounting Style | SMD/SMT | SMD/SMT | - |
Maximum Gate Emitter Voltage | 30 V | 30 V | - |
Product Type | IGBT Modules | IGBT Modules | IGBT Transistors |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | IGBTs | IGBTs | IGBTs |
Technology | - | - | Si |