APT10M11JVRU2 vs APT10M11JVRU3 vs APT10M11JVFR

 
PartNumberAPT10M11JVRU2APT10M11JVRU3APT10M11JVFR
DescriptionDiscrete Semiconductor Modules Power Module - MosfetDiscrete Semiconductor Modules Power Module - MosfetDiscrete Semiconductor Modules Power FREDFET - MOS5
ManufacturerMicrochipMicrochipMicrochip
Product CategoryDiscrete Semiconductor ModulesDiscrete Semiconductor ModulesDiscrete Semiconductor Modules
RoHSYYY
ProductPower MOSFET ModulesPower MOSFET ModulesPower MOSFET Modules
Vgs Gate Source Voltage30 V30 V30 V
Mounting StyleScrew MountScrew MountScrew Mount
Package / CaseSOT-227-4SOT-227-4SOT-227-4
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
PackagingTubeTubeTube
ConfigurationSingleSingleSingle
Height9.6 mm9.6 mm-
Length38.2 mm38.2 mm-
Width25.4 mm25.4 mm-
BrandMicrochip / MicrosemiMicrochip / MicrosemiMicrochip / Microsemi
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-ChannelN-Channel
Fall Time9 ns9 ns9 ns
Id Continuous Drain Current142 A142 A144 A
Pd Power Dissipation450 W450 W450 W
Product TypeDiscrete Semiconductor ModulesDiscrete Semiconductor ModulesDiscrete Semiconductor Modules
Rds On Drain Source Resistance11 mOhms11 mOhms11 mOhms
Rise Time48 ns48 ns48 ns
Factory Pack Quantity111
SubcategoryDiscrete Semiconductor ModulesDiscrete Semiconductor ModulesDiscrete Semiconductor Modules
TradenamePOWER MOS V, ISOTOPPOWER MOS V, ISOTOP-
Typical Turn Off Delay Time51 ns51 ns51 ns
Typical Turn On Delay Time16 ns16 ns16 ns
Vds Drain Source Breakdown Voltage100 V100 V100 V
Vgs th Gate Source Threshold Voltage2 V2 V2 V
Unit Weight1.058219 oz1.058219 oz1.015890 oz
Type--MOSFET
Operating Supply Voltage--0.5 V
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