APT13005DT-G1 vs APT13005DI-G1 vs APT13005DTF-G1

PartNumber	APT13005DT-G1	APT13005DI-G1	APT13005DTF-G1
Description	Bipolar Transistors - BJT 450V NPN High Volt PWR Trans 450BVceo	Bipolar Transistors - BJT 450V NPN High Volt PWR Trans 450BVceo	Bipolar Transistors - BJT 450V NPN High Volt PWR Trans 450BVceo
Manufacturer	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Transistors - Bipolar (BJT) - RF
RoHS	Y	Y	-
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-220AB-3	TO-251-3	-
Transistor Polarity	NPN	NPN	NPN
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	450 V	450 V	-
Emitter Base Voltage VEBO	9 V	9 V	-
Collector Emitter Saturation Voltage	900 mV	900 mV	900 mV
Maximum DC Collector Current	8 A	8 A	8 A
Gain Bandwidth Product fT	4 MHz	4 MHz	4 MHz
Minimum Operating Temperature	- 65 C	- 65 C	- 65 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Series	APT13005	APT13005	APT13005
DC Current Gain hFE Max	35 at 2 A, 5 V	35 at 2 A, 5 V	35 at 2 A at 5 V
Packaging	Reel	Bulk	Reel
Brand	Diodes Incorporated	Diodes Incorporated	-
DC Collector/Base Gain hfe Min	8 at 2 A, 5 V	8 at 2 A, 5 V	-
Pd Power Dissipation	75 W	25 W	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	1000	3600	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.081130 oz	0.012102 oz	0.080072 oz
Package Case	-	-	TO-220F-3
Pd Power Dissipation	-	-	28 W
Collector Emitter Voltage VCEO Max	-	-	450 V
Emitter Base Voltage VEBO	-	-	9 V
DC Collector Base Gain hfe Min	-	-	8 at 2 A 5 V