PartNumber | APT64GA90LD30 | APT64GA90B2D30 | APT64GA90B |
Description | IGBT Transistors FG, IGBT-COMBI, 900V, TO-264 | IGBT Transistors FG, IGBT-COMBI, 900V, TO-247 T-MAX | IGBT Transistors FG, IGBT, 900V, TO-247 |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-264-3 | - | - |
Mounting Style | Through Hole | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 900 V | - | - |
Collector Emitter Saturation Voltage | 2.5 V | - | - |
Maximum Gate Emitter Voltage | 30 V | - | - |
Continuous Collector Current at 25 C | 117 A | - | - |
Pd Power Dissipation | 500 W | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Packaging | Tube | Tube | Tube |
Continuous Collector Current Ic Max | 117 A | - | - |
Height | 5.21 mm | - | - |
Length | 26.49 mm | - | - |
Operating Temperature Range | - 55 C to + 150 C | - | - |
Width | 20.5 mm | - | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Continuous Collector Current | 117 A | - | - |
Gate Emitter Leakage Current | 100 nA | - | - |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | IGBTs | IGBTs | IGBTs |
Tradename | POWER MOS 8 | - | - |
Unit Weight | 0.373904 oz | - | - |