PartNumber | APT85GR120B2 | APT85GR120J | APT85GR120JD60 |
Description | IGBT Modules FG, IGBT, 1200V, 85A, TO-247 T-MAX | IGBT Modules FG, IGBT, 1200V, 85A, SOT-227 | IGBT Modules FG, IGBT-COMBI, 1200V, 85A, SOT-227 |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
RoHS | Y | Y | Y |
Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.2 kV |
Collector Emitter Saturation Voltage | 3.5 V | 3.5 V | 3.5 V |
Continuous Collector Current at 25 C | 170 A | 118 A | 118 A |
Gate Emitter Leakage Current | 250 nA | 250 nA | 250 nA |
Pd Power Dissipation | 962 W | 595 W | 595 W |
Package / Case | TO-247-3 | ISOTOP-4 | ISOTOP-4 |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Packaging | Tube | Tube | Tube |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Mounting Style | Through Hole | SMD/SMT | SMD/SMT |
Maximum Gate Emitter Voltage | 30 V | 30 V | 30 V |
Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 0.211644 oz | - | - |