APTGF150A120T3AG vs APTGF150A120TG vs APTGF150A12TG

 
PartNumberAPTGF150A120T3AGAPTGF150A120TGAPTGF150A12TG
DescriptionIGBT Modules Power Module - IGBTIGBT Modules Power Module - IGBT
ManufacturerMicrochipMicrochip-
Product CategoryIGBT ModulesIGBT Modules-
RoHSYY-
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max1.2 kV1.2 kV-
Collector Emitter Saturation Voltage3.2 V3.2 V-
Continuous Collector Current at 25 C210 A200 A-
Gate Emitter Leakage Current400 nA500 nA-
Pd Power Dissipation1.041 kW961 W-
Package / CaseSP3-32SP4-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 100 C+ 100 C-
TechnologySiSi-
BrandMicrochip / MicrosemiMicrochip / Microsemi-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity5050-
SubcategoryIGBTsIGBTs-
Unit Weight-3.880136 oz-
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