PartNumber | APTGF200A120D3G | APTGF200U120DG | APTGF200SK120G |
Description | IGBT Modules Power Module - IGBT | POWER IGBT TRANSISTOR | |
Manufacturer | Microchip | - | - |
Product Category | IGBT Modules | - | - |
RoHS | Y | - | - |
Product | IGBT Silicon Modules | - | - |
Configuration | Dual | - | - |
Collector Emitter Voltage VCEO Max | 1.2 kV | - | - |
Collector Emitter Saturation Voltage | 3.2 V | - | - |
Continuous Collector Current at 25 C | 300 A | - | - |
Gate Emitter Leakage Current | 400 nA | - | - |
Pd Power Dissipation | 1.4 kW | - | - |
Package / Case | D3-11 | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 125 C | - | - |
Brand | Microchip / Microsemi | - | - |
Mounting Style | Chassis Mount | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Product Type | IGBT Modules | - | - |
Factory Pack Quantity | 50 | - | - |
Subcategory | IGBTs | - | - |