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| PartNumber | APTGT600DA60G | APTGT600A60G | APTGT600DU60G |
| Description | IGBT Modules DOR CC6117 | IGBT Modules CC6080 | IGBT Modules DOR CC6140 |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Single | Dual | Dual |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 1.4 V | 1.4 V | 1.4 V |
| Continuous Collector Current at 25 C | 700 A | 700 A | 700 A |
| Gate Emitter Leakage Current | 800 nA | 800 nA | 800 nA |
| Pd Power Dissipation | 2.3 kW | 2.3 kW | 2.3 kW |
| Package / Case | SP6 | SP6 | SP6 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 100 C | + 100 C | + 100 C |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 3.880136 oz | 3.880136 oz | 3.880136 oz |