APTM100A13SG vs APTM100A13DG vs APTM100A13SCG

 
PartNumberAPTM100A13SGAPTM100A13DGAPTM100A13SCG
DescriptionDiscrete Semiconductor Modules Power Module - MosfetDiscrete Semiconductor Modules Power Module - MosfetDiscrete Semiconductor Modules CC6025
ManufacturerMicrochipMicrochipMicrochip
Product CategoryDiscrete Semiconductor ModulesDiscrete Semiconductor ModulesDiscrete Semiconductor Modules
RoHSYYY
ProductPower MOSFET Modules--
Vgs Gate Source Voltage30 V--
Mounting StyleScrew Mount--
Package / CaseSP-6--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTubeTubeTube
ConfigurationSingle--
Height21.9 mm--
Length108 mm--
Width62 mm--
BrandMicrochip / MicrosemiMicrochip / MicrosemiMicrochip / Microsemi
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Fall Time24 ns--
Id Continuous Drain Current65 A--
Pd Power Dissipation1.25 kW--
Product TypeDiscrete Semiconductor ModulesDiscrete Semiconductor ModulesDiscrete Semiconductor Modules
Rds On Drain Source Resistance130 mOhms--
Rise Time9 ns--
Factory Pack Quantity111
SubcategoryDiscrete Semiconductor ModulesDiscrete Semiconductor ModulesDiscrete Semiconductor Modules
TradenamePOWER MOS 7--
Typical Turn Off Delay Time50 ns--
Typical Turn On Delay Time9 ns--
Vds Drain Source Breakdown Voltage1 kV--
Vgs th Gate Source Threshold Voltage3 V--
Unit Weight3.880136 oz--
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