APTM10HM19FT3G vs APTM10HM09FT3G vs APTM10HM05FG

 
PartNumberAPTM10HM19FT3GAPTM10HM09FT3GAPTM10HM05FG
DescriptionDiscrete Semiconductor Modules Power Module - MosfetDiscrete Semiconductor Modules Power Module - MosfetDiscrete Semiconductor Modules Power Module - Mosfet
ManufacturerMicrochipMicrochipMicrochip
Product CategoryDiscrete Semiconductor ModulesDiscrete Semiconductor ModulesDiscrete Semiconductor Modules
RoHSYYY
ProductPower MOSFET Modules--
Vgs Gate Source Voltage30 V--
Mounting StyleScrew Mount--
Package / CaseSP-32--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTubeTubeTube
ConfigurationSingle--
Height11.5 mm--
Length73.4 mm--
Width40.8 mm--
BrandMicrochip / MicrosemiMicrochip / MicrosemiMicrochip / Microsemi
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Fall Time125 ns--
Id Continuous Drain Current70 A--
Pd Power Dissipation208 W--
Product TypeDiscrete Semiconductor ModulesDiscrete Semiconductor ModulesDiscrete Semiconductor Modules
Rds On Drain Source Resistance19 mOhms--
Rise Time70 ns--
Factory Pack Quantity111
SubcategoryDiscrete Semiconductor ModulesDiscrete Semiconductor ModulesDiscrete Semiconductor Modules
TradenamePOWER MOS V--
Typical Turn Off Delay Time95 ns--
Typical Turn On Delay Time35 ns--
Vds Drain Source Breakdown Voltage100 V--
Vgs th Gate Source Threshold Voltage2 V--
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