ATF-501P8-TR2 vs ATF-501P8-BLK vs ATF-501P8-TR1

PartNumber	ATF-501P8-TR2	ATF-501P8-BLK	ATF-501P8-TR1
Description	RF JFET Transistors Transistor GaAs High Linearity	RF JFET Transistors Transistor GaAs High Linearity	FET RF 7V 2GHZ 8-LPCC
Manufacturer	Broadcom Limited	Broadcom Limited	AGILENT
Product Category	RF JFET Transistors	RF JFET Transistors	RF FETs
RoHS	Y	Y	-
Transistor Type	EpHEMT	EpHEMT	EpHEMT
Technology	GaAs	GaAs	GaAs
Gain	15 dB	15 dB	15 dB
Vds Drain Source Breakdown Voltage	7 V	7 V	-
Vgs Gate Source Breakdown Voltage	- 5 V to 0.8 V	- 5 V to 0.8 V	-
Id Continuous Drain Current	1 A	1 A	-
Maximum Drain Gate Voltage	- 5 V to + 1 V	- 5 V to + 1 V	- 5 V to + 1 V
Minimum Operating Temperature	- 65 C	- 65 C	- 65 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	3.5 W	3.5 W	-
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	LPCC-8	LPCC-8	-
Packaging	Reel	Bulk	Reel
Configuration	Single Dual Source	Single Dual Source	Single Dual Source
Operating Frequency	2 GHz	2 GHz	2 GHz
Product	RF JFET	RF JFET	-
Type	GaAs EpHEMT	GaAs EpHEMT	-
Brand	Broadcom / Avago	Broadcom / Avago	-
Forward Transconductance Min	1872 mmho	1872 mmho	-
NF Noise Figure	1 dB	1 dB	-
P1dB Compression Point	29 dBm	29 dBm	-
Product Type	RF JFET Transistors	RF JFET Transistors	-
Factory Pack Quantity	10000	100	-
Subcategory	Transistors	Transistors	-
Package Case	-	-	LPCC-8
Pd Power Dissipation	-	-	3.5 W
Id Continuous Drain Current	-	-	1 A
Vds Drain Source Breakdown Voltage	-	-	7 V
Forward Transconductance Min	-	-	1872 mmho
Vgs Gate Source Breakdown Voltage	-	-	- 5 V to 0.8 V
NF Noise Figure	-	-	1 dB
P1dB Compression Point	-	-	29 dBm