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| PartNumber | AUIRF2907ZS-7P | AUIRF2907ZS-7PPBF | AUIRF2907ZS-7PTRL |
| Description | RF Bipolar Transistors MOSFET AUTO 75V 1 N-CH HEXFET 3.8mOhms | ||
| Manufacturer | IR | - | - |
| Product Category | IC Chips | - | - |
| Packaging | Tube | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | TO-252-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 300 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 44 ns | - | - |
| Rise Time | 90 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 180 A | - | - |
| Vds Drain Source Breakdown Voltage | 75 V | - | - |
| Rds On Drain Source Resistance | 3.8 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 92 ns | - | - |
| Typical Turn On Delay Time | 21 ns | - | - |
| Qg Gate Charge | 170 nC | - | - |
| Channel Mode | Enhancement | - | - |