PartNumber | AUIRG4PH50S | AUIRG4PC40S-E | AUIRG4PH50S-205 |
Description | IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT | IGBT Transistors DISCRETES | IGBT 1200V TO247-3 |
Manufacturer | Infineon | Infineon | - |
Product Category | IGBT Transistors | IGBT Transistors | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Package / Case | TO-247-3 | TO-247AD-3 | - |
Mounting Style | Through Hole | Through Hole | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 1.2 kV | 600 V | - |
Collector Emitter Saturation Voltage | 1.7 V | 1.32 V | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Continuous Collector Current at 25 C | 57 A | 60 A | - |
Pd Power Dissipation | 200 W | 160 W | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Packaging | Tube | Tube | - |
Height | 20.7 mm | - | - |
Length | 15.87 mm | - | - |
Width | 5.31 mm | - | - |
Brand | Infineon Technologies | Infineon / IR | - |
Product Type | IGBT Transistors | IGBT Transistors | - |
Factory Pack Quantity | 400 | 400 | - |
Subcategory | IGBTs | IGBTs | - |
Part # Aliases | SP001512028 | SP001511242 | - |
Unit Weight | 1.340411 oz | - | - |
Maximum Operating Temperature | - | + 150 C | - |
Continuous Collector Current Ic Max | - | 60 A | - |
Gate Emitter Leakage Current | - | +/- 100 nA | - |