BAW76-TAP vs BAW76-TR vs BAW76

 
PartNumberBAW76-TAPBAW76-TRBAW76
DescriptionDiodes - General Purpose, Power, Switching 35 Volt 300mA 2nsDiodes - General Purpose, Power, Switching 35 Volt 300mA 2nsDIODE GEN PURP 75V 300MA DO35
ManufacturerVishayVishayFairchild Semiconductor
Product CategoryDiodes - General Purpose, Power, SwitchingDiodes - General Purpose, Power, SwitchingDiodes, Rectifiers - Single
RoHSEE-
ProductGeneral Purpose DiodesGeneral Purpose Diodes-
Mounting StyleThrough HoleThrough Hole-
Package / CaseDO-35-2DO-35-2-
Peak Reverse Voltage75 V75 V-
Max Surge Current2 A2 A-
If Forward Current150 mA150 mA-
ConfigurationSingleSingle-
Recovery Time4 ns4 ns-
Vf Forward Voltage1 V1 V-
Ir Reverse Current0.1 uA0.1 uA-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingAmmo PackReelBulk
Height1.7 mm1.7 mm-
Length3.9 mm3.9 mm-
TypeSwitching DiodeSwitching Diode-
Width1.7 mm1.7 mm-
BrandVishay SemiconductorsVishay Semiconductors-
Product TypeDiodes - General Purpose, Power, SwitchingDiodes - General Purpose, Power, Switching-
Factory Pack Quantity1000010000-
SubcategoryDiodes & RectifiersDiodes & Rectifiers-
Unit Weight0.004586 oz0.004586 oz-
Series---
Package Case--DO-204AH, DO-35, Axial
Mounting Type--Through Hole
Supplier Device Package--DO-35
Speed--Fast Recovery = 200mA (Io)
Diode Type--Standard
Current Reverse Leakage Vr--100nA @ 50V
Voltage Forward Vf Max If--1V @ 100mA
Voltage DC Reverse Vr Max--75V
Current Average Rectified Io--300mA
Reverse Recovery Time trr--4ns
Capacitance Vr F--2pF @ 0V, 1MHz
Operating Temperature Junction--175°C (Max)
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