BC33725TA vs BC33725TAR vs BC33725TAONSEMI

 
PartNumberBC33725TABC33725TARBC33725TAONSEMI
DescriptionBipolar Transistors - BJT NPN 45V 800mA HFE/400Bipolar Transistors - BJT NPN Si Transistor Epitaxial
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3 Kinked LeadTO-92-3 Kinked Lead-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max45 V45 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage0.7 V0.7 V-
Maximum DC Collector Current0.8 A0.8 A-
Gain Bandwidth Product fT100 MHz100 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBC337BC337-
DC Current Gain hFE Max630630-
Height4.7 mm4.7 mm-
Length4.7 mm4.7 mm-
PackagingAmmo PackAmmo Pack-
Width3.93 mm3.93 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current0.8 A0.8 A-
Pd Power Dissipation625 mW625 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity20002000-
SubcategoryTransistorsTransistors-
Part # AliasesBC33725TA_NL--
Unit Weight0.008466 oz0.009524 oz-
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