BC53-10PASX vs BC53-10PA,115 vs BC53-10PA

 
PartNumberBC53-10PASXBC53-10PA,115BC53-10PA
DescriptionBipolar Transistors - BJT 1A PNP Medium Power TransistorsBipolar Transistors - BJT 80 V, 1 A PNP medium power transistors
ManufacturerNexperiaNexperiaNXP Semiconductors
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYY-
TechnologySi--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDFN-2020D-3DFN-2020-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 80 V- 80 V-
Collector Base Voltage VCBO- 100 V- 100 V-
Emitter Base Voltage VEBO- 5 V- 5 V-
Collector Emitter Saturation Voltage- 500 mV- 0.5 V-
Maximum DC Collector Current- 2 A- 2 A-
Gain Bandwidth Product fT145 MHz145 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
DC Current Gain hFE Max160 at - 150 mA, - 2 V160-
PackagingReelReelDigi-ReelR Alternate Packaging
BrandNexperiaNexperia-
Continuous Collector Current- 1 A- 1 A-
DC Collector/Base Gain hfe Min63 at - 150 mA, - 2 V63-
Pd Power Dissipation1.65 W1.65 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
QualificationAEC-Q101AEC-Q101-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Series---
Package Case--3-UDFN, Exposed Pad
Mounting Type--Surface Mount
Supplier Device Package--3-HUSON (2x2)
Power Max--420mW
Transistor Type--PNP
Current Collector Ic Max--1A
Voltage Collector Emitter Breakdown Max--80V
DC Current Gain hFE Min Ic Vce--63 @ 150mA, 2V
Vce Saturation Max Ib Ic--500mV @ 50mA, 500mA
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition--145MHz
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