BC807-40QAZ vs BC807-40Q-7-F vs BC807-40QA

 
PartNumberBC807-40QAZBC807-40Q-7-FBC807-40QA
DescriptionBipolar Transistors - BJT 45 V, 500 mA PNP gen purpose transistorsBipolar Transistors - BJT 45V PNP SS Trans Vcbo -50V 350mW
ManufacturerNexperiaDiodes IncorporatedNXP Semiconductors
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single, Pre-Biased
RoHSYY-
Mounting StyleSMD/SMT--
Package / CaseDFN-1010D-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 45 V--
Collector Base Voltage VCBO- 50 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 700 mV--
Maximum DC Collector Current- 1 A--
Gain Bandwidth Product fT80 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max600--
PackagingReelReelDigi-ReelR Alternate Packaging
BrandNexperiaDiodes Incorporated-
Continuous Collector Current- 500 mA--
DC Collector/Base Gain hfe Min250--
Pd Power Dissipation300 mW--
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
QualificationAEC-Q101AEC-Q101-
Factory Pack Quantity50003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000039 oz--
Series-BC807Automotive, AEC-Q101
Package Case--3-XDFN Exposed Pad
Mounting Type--Surface Mount
Supplier Device Package--DFN1010D-3
Power Max--900mW
Transistor Type--PNP
Current Collector Ic Max--500mA
Voltage Collector Emitter Breakdown Max--45V
DC Current Gain hFE Min Ic Vce--40 @ 500mA, 1V
Vce Saturation Max Ib Ic--700mV @ 50mA, 500mA
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition--80MHz
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