BC817-40Q-7-F vs BC817-40Q-13-F vs BC817-40QA

 
PartNumberBC817-40Q-7-FBC817-40Q-13-FBC817-40QA
DescriptionBipolar Transistors - BJT SS Low Sat TransistorBipolar Transistors - BJT SS Low Sat Transistor
ManufacturerDiodes IncorporatedDiodes IncorporatedNXP Semiconductors
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single, Pre-Biased
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-23-3SOT-23-3-
Transistor PolarityNPN-NPN
ConfigurationSingle--
Collector Emitter Voltage VCEO Max45 V--
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.7 V-700 mV
Gain Bandwidth Product fT100 MHz-100 MHz
Minimum Operating Temperature- 65 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesBC817-16Q / -25Q / -40QBC817-16Q / -25Q / -40QAutomotive, AEC-Q101
DC Current Gain hFE Max600-600 mA
PackagingReelReelDigi-ReelR Alternate Packaging
BrandDiodes IncorporatedDiodes Incorporated-
Continuous Collector Current0.5 A-500 mA
DC Collector/Base Gain hfe Min250--
Pd Power Dissipation350 mW--
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
QualificationAEC-Q101AEC-Q101-
Factory Pack Quantity300010000-
SubcategoryTransistorsTransistors-
Unit Weight0.001058 oz0.003951 oz-
Package Case--3-XDFN Exposed Pad
Mounting Type--Surface Mount
Supplier Device Package--DFN1010D-3
Power Max--900mW
Transistor Type--NPN
Current Collector Ic Max--500mA
Voltage Collector Emitter Breakdown Max--45V
DC Current Gain hFE Min Ic Vce--40 @ 500mA, 1V
Vce Saturation Max Ib Ic--700mV @ 50mA, 500mA
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition--100MHz
Pd Power Dissipation--900 mW
Collector Emitter Voltage VCEO Max--45 V
Collector Base Voltage VCBO--50 V
Emitter Base Voltage VEBO--5 V
Maximum DC Collector Current--500 mA
DC Collector Base Gain hfe Min--250
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