BC846BLP4-7B vs BC846BLT1 vs BC846BLP4-7

PartNumber	BC846BLP4-7B	BC846BLT1	BC846BLP4-7
Description	Bipolar Transistors - BJT 65V NPN Small Sig 80V 65V 100mA	Bipolar Transistors - BJT 100mA 80V NPN
Manufacturer	Diodes Incorporated	ON Semiconductor	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	N	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	X2-DFN1006-3	SOT-23-3	-
Transistor Polarity	NPN	NPN	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	65 V	65 V	-
Collector Base Voltage VCBO	80 V	80 V	-
Emitter Base Voltage VEBO	6 V	6 V	-
Collector Emitter Saturation Voltage	220 mV	0.6 V	-
Maximum DC Collector Current	0.2 A	0.1 A	-
Gain Bandwidth Product fT	300 MHz	100 MHz	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	BC846	-	-
DC Current Gain hFE Max	450 at 2 mA, 5 V	-	-
Packaging	Reel	Reel	-
Brand	Diodes Incorporated	ON Semiconductor	-
Continuous Collector Current	0.2 A	0.1 A	-
DC Collector/Base Gain hfe Min	200 at 2 mA, 5 V	200	-
Pd Power Dissipation	1 W	225 mW	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	10000	3000	-
Subcategory	Transistors	Transistors	-
Height	-	0.94 mm	-
Length	-	2.9 mm	-
Width	-	1.3 mm	-
Unit Weight	-	0.000282 oz	-