PartNumber | BC847BE6327XT | BC847BE6327HTSA1 | BC 847B E6327 |
Description | Bipolar Transistors - BJT NPN 45 V 100 mA | Bipolar Transistors - BJT NPN 45 V 100 mA | Bipolar Transistors - BJT NPN 45 V 100 mA |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Dual | Dual | Dual |
Collector Emitter Voltage VCEO Max | 45 V | 45 V | 45 V |
Collector Base Voltage VCBO | 50 V | 50 V | 50 V |
Emitter Base Voltage VEBO | 6 V | 6 V | 6 V |
Collector Emitter Saturation Voltage | 200 mV | 200 mV | 200 mV |
Maximum DC Collector Current | 200 mA | 200 mA | 200 mA |
Gain Bandwidth Product fT | 250 MHz | 250 MHz | 250 MHz |
Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
DC Current Gain hFE Max | 450 | 450 | 450 |
Packaging | Reel | Reel | Reel |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Continuous Collector Current | 100 mA | 100 mA | 100 mA |
DC Collector/Base Gain hfe Min | 200 | 200 | 200 |
Pd Power Dissipation | 330 mW | 330 mW | 330 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | 847B BC BC847BE6327HTSA1 E6327 SP000010559 | 847B BC BC847BE6327XT E6327 SP000010559 | BC847BE6327HTSA1 BC847BE6327XT SP000010559 |
Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
Series | - | BC847 | BC 847B |
Height | - | - | 1 mm |
Length | - | - | 2.9 mm |
Width | - | - | 1.3 mm |