PartNumber | BC856AS-7 | BC856AS | BC856AS-7 , MAX6834HXRD0 |
Description | Bipolar Transistors - BJT 100mA 65V | ||
Manufacturer | Diodes Incorporated | - | - |
Product Category | Bipolar Transistors - BJT | - | - |
RoHS | Y | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-363-6 | - | - |
Transistor Polarity | PNP | - | - |
Configuration | Dual | - | - |
Collector Emitter Voltage VCEO Max | - 65 V | - | - |
Collector Base Voltage VCBO | 80 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Collector Emitter Saturation Voltage | - 250 mV | - | - |
Maximum DC Collector Current | 0.1 A | - | - |
Gain Bandwidth Product fT | 100 MHz | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | BC856A | - | - |
DC Current Gain hFE Max | 250 | - | - |
Height | 1 mm | - | - |
Length | 2.2 mm | - | - |
Packaging | Reel | - | - |
Width | 1.35 mm | - | - |
Brand | Diodes Incorporated | - | - |
DC Collector/Base Gain hfe Min | 125 | - | - |
Pd Power Dissipation | 200 mW | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.000212 oz | - | - |