BC857CT-7-F vs BC857CT,115 vs BC857CT

 
PartNumberBC857CT-7-FBC857CT,115BC857CT
DescriptionBipolar Transistors - BJT PNP BIPOLARBipolar Transistors - BJT TRANS GP TAPE-7Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
ManufacturerDiodes Incorporated-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-523-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 45 V--
Collector Base Voltage VCBO- 50 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 650 mV--
Maximum DC Collector Current- 100 mA--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesBC857C--
Height0.75 mm--
Length1.6 mm--
PackagingReel--
Width0.8 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min420 at -2 mA, - 5 V--
Pd Power Dissipation150 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000071 oz--
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