BCP5616QTA vs BCP5616QTC vs BCP5616Q-7-F

PartNumber	BCP5616QTA	BCP5616QTC	BCP5616Q-7-F
Description	Bipolar Transistors - BJT Pwr Mid Perf Transistor	Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 4K
Manufacturer	Diodes Incorporated	Diodes Incorporated	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	Y	-
Technology	Si	Si	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	SOT-223-3	SOT-223-3	-
Transistor Polarity	NPN	PNP	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	80 V	80 V	-
Collector Base Voltage VCBO	100 V	100 V	-
Emitter Base Voltage VEBO	5 V	5 V	-
Collector Emitter Saturation Voltage	0.5 V	0.5 V	-
Maximum DC Collector Current	1 A	2 A	-
Gain Bandwidth Product fT	150 MHz	150 MHz	-
Minimum Operating Temperature	- 65 C	- 65 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
DC Current Gain hFE Max	250	250 at 150 mA, 2 V	-
Packaging	Reel	Reel	-
Brand	Diodes Incorporated	Diodes Incorporated	-
Continuous Collector Current	1 A	1 A	-
DC Collector/Base Gain hfe Min	100	25 at 5 mA, 2 V	-
Pd Power Dissipation	2 W	2 W	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Qualification	AEC-Q101	AEC-Q101	-
Factory Pack Quantity	1000	4000	-
Subcategory	Transistors	Transistors	-
Unit Weight	-	0.003951 oz	-