BD13510STU vs BD135-16 vs BD13510S

 
PartNumberBD13510STUBD135-16BD13510S
DescriptionBipolar Transistors - BJT NPN Si Transistor EpitaxialBipolar Transistors - BJT NPN Silicon TrnsistrTRANS NPN 45V 1.5A TO-126
ManufacturerON SemiconductorSTMicroelectronics-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-126-3SOT-32-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max45 V45 V-
Collector Base Voltage VCBO45 V45 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage0.5 V--
Maximum DC Collector Current1.5 A1.5 A-
Minimum Operating Temperature- 55 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBD135BD135-
DC Current Gain hFE Max250--
Height1.5 mm10.8 mm-
Length8 mm7.8 mm-
PackagingTubeTube-
Width3.25 mm2.7 mm-
BrandON Semiconductor / FairchildSTMicroelectronics-
Continuous Collector Current1.5 A--
DC Collector/Base Gain hfe Min40--
Pd Power Dissipation12.5 W1250 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity19202000-
SubcategoryTransistorsTransistors-
Part # AliasesBD13510STU_NL--
Unit Weight0.026843 oz0.002116 oz-
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