PartNumber | BD139-10 | BD13910STU | BD13910S |
Description | Bipolar Transistors - BJT NPN Silicon Trnsistr | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | Bipolar Transistors - BJT NPN Epitaxial Sil |
Manufacturer | STMicroelectronics | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | SOT-32-3 | TO-126-3 | TO-126-3 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 80 V | 80 V | 80 V |
Collector Base Voltage VCBO | 80 V | 80 V | 80 V |
Emitter Base Voltage VEBO | 5 V | 5 V | 5 V |
Maximum DC Collector Current | 1.5 A | 1.5 A | 1.5 A |
Minimum Operating Temperature | - 65 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | BD139 | BD139 | BD139 |
Height | 10.8 mm | 1.5 mm | 1.5 mm |
Length | 7.8 mm | 8 mm | 8 mm |
Packaging | Tube | Tube | Bulk |
Width | 2.7 mm | 3.25 mm | 3.25 mm |
Brand | STMicroelectronics | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
DC Collector/Base Gain hfe Min | 63 | 40 | 40 |
Pd Power Dissipation | 1250 mW | 12.5 W | 12.5 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 2000 | 1920 | 2000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.002116 oz | 0.026843 oz | 0.026843 oz |
Collector Emitter Saturation Voltage | - | 0.5 V | 0.5 V |
DC Current Gain hFE Max | - | 250 | 160 |
Continuous Collector Current | - | 1.5 A | 1.5 A |
Part # Aliases | - | BD13910STU_NL | BD13910S_NL |