BD434S vs BD434 vs BD434STU

 
PartNumberBD434SBD434BD434STU
DescriptionBipolar Transistors - BJT PNP Epitaxial SilBipolar Transistors - BJT PNP Medium PowerTRANS PNP 22V 4A TO-126
ManufacturerON SemiconductorSTMicroelectronics-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleSMD/SMT-
Package / CaseTO-126-3SOT-32-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 22 V22 V-
Collector Base Voltage VCBO- 22 V22 V-
Emitter Base Voltage VEBO- 5 V5 V-
Collector Emitter Saturation Voltage- 0.2 V0.2 V-
Maximum DC Collector Current4 A4 A-
Gain Bandwidth Product fT3 MHz3 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBD434BD434-
Height11 mm10.8 mm-
Length8 mm7.8 mm-
PackagingBulkTube-
Width3.25 mm2.7 mm-
BrandON Semiconductor / FairchildSTMicroelectronics-
DC Collector/Base Gain hfe Min4040-
Pd Power Dissipation36 W36 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity200050-
SubcategoryTransistorsTransistors-
Part # AliasesBD434S_NL--
Unit Weight0.026843 oz0.002116 oz-
DC Current Gain hFE Max-130-
Continuous Collector Current-4 A-
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